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BAS101; BAS101S
High-voltage switching diodes
Rev. 02 -- 14 December 2009 Product data sheet
1. Product profile
1.1 General description
High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Package NXP BAS101 BAS101S SOT23 SOT23 JEITA single dual series Configuration
Type number
1.2 Features
High switching speed: trr 50 ns Low leakage current Repetitive peak reverse voltage: VRRM 300 V Low capacitance: Cd 2 pF Reverse voltage: VR 300 V Small SMD plastic package
1.3 Applications
High-speed switching High-voltage switching Voltage clamping Reverse polarity protection
1.4 Quick reference data
Table 2. Symbol Per diode IF IR VR trr
[1]
Quick reference data Parameter forward current reverse current reverse voltage reverse recovery time
[1]
Conditions
Min -
Typ -
Max 200 150 300 50
Unit mA nA V ns
VR = 250 V
-
When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
2. Pinning information
Table 3. Pin BAS101 1 2 3 anode not connected cathode
1 2 3 1 3 2
006aaa764
Pinning Description Simplified outline Symbol
BAS101S 1 2 3 anode (diode 1) cathode (diode 2) cathode (diode 1), anode (diode 2)
3 3
1
2
1
2
006aaa763
3. Ordering information
Table 4. Ordering information Package Name BAS101 BAS101S Description plastic surface-mounted package; 3 leads Version SOT23 Type number
4. Marking
Table 5. BAS101 BAS101S
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
Marking codes Marking code[1] *HQ *HR
Type number
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
2 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per diode VRRM VR IF IFRM IFSM Per device Ptot Tj Tamb Tstg
[1] [2]
Parameter repetitive peak reverse voltage reverse voltage
Conditions
Min -
Max 300 600 300 600 200 100 1 9
Unit V V V V mA mA A A
series connection series connection
[1]
forward current series connection repetitive peak forward current non-repetitive peak forward current total power dissipation junction temperature ambient temperature storage temperature
Tj = 25 C prior to surge
tp 1 ms; 0.25 square wave; tp 1 s Tamb 25 C
-
[2]
-65 -65
250 150 +150 +150
mW C C C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 7. Symbol Per device Rth(j-a)
[1]
Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1]
Min -
Typ -
Max 500
Unit K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
3 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
7. Characteristics
Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Per diode VF IR Cd trr
[1] [2]
Conditions IF = 100 mA VR = 250 V VR = 250 V; Tj = 150 C VR = 0 V; f = 1 MHz
[2] [1]
Min -
Typ -
Max 1.1 150 100 2 50
Unit V nA A pF ns
forward voltage reverse current diode capacitance reverse recovery time
Pulse test: tp 300 s; 0.02.
When switched from IF = 30 mA to IR = 30 mA; RL = 100 ; measured at IR = 3 mA.
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
4 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
500 IF (mA) 400
mhc618
102 IFSM (A) 10
mbg703
300
200 1 100
(1) (2) (3)
0 0 0.5 1
10-1
VF (V)
1.5
1
10
102
103 tp (s)
104
(1) Tamb = 150 C (2) Tamb = 75 C (3) Tamb = 25 C
Based on square wave currents Tj = 25 C; prior to surge
Fig 1.
Forward current as a function of forward voltage; typical values
mhc619
Fig 2.
Non-repetitive peak forward current as a function of pulse duration; maximum values
mhc621
102 IR (A) 10
0.42 Cd (pF)
0.38
1
0.34 10-1
10-2
0
40
80
120
160
200 Tj (C)
0.3 0 10 20 30 VR (V) 40
VR = 300 V
f = 1 MHz; Tamb = 25 C
Fig 3.
Reverse current as a function of junction temperature; typical values
Fig 4.
Diode capacitance as a function of reverse voltage; typical values
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
5 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
8. Test information
tr D.U.T. RS = 50 V = VR + IF x RS IF SAMPLING OSCILLOSCOPE Ri = 50 VR
mga881
tp t
10 % + IF trr t
90 % input signal output signal
(1)
(1) IR = 3 mA
Fig 5.
Reverse recovery time test circuit and waveforms
9. Package outline
3.0 2.8
3
1.1 0.9
0.45 0.15 2.5 1.4 2.1 1.2
1
2
1.9 Dimensions in mm
0.48 0.38
0.15 0.09 04-11-04
Fig 6.
Package outline SOT23 (TO-236AB)
10. Packing information
Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package BAS101 BAS101S
[1] For further information and the availability of packing methods, see Section 15.
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 10000 -235 -215
SOT23
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
6 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
11. Soldering
2.90 2.50 solder lands solder resist 0.85 3.00 0.85 1.30 3 0.60 (3x) 0.50 (3x) 0.60 (3x) 1.00 3.30
MSA439
2
1 2.70 occupied area solder paste
Dimensions in mm
Fig 7.
Reflow soldering footprint SOT23 (TO-236AB)
3.40 1.20 (2x) solder lands solder resist occupied area 2 1 3
4.60 4.00 1.20
preferred transport direction during soldering 2.80 4.50
MSA427
Dimensions in mm
Fig 8.
Wave soldering footprint SOT23 (TO-236AB)
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
7 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
12. Mounting
43.4
0.6
0.7 40
0.6 0.7 0.5
Dimensions in mm
006aaa527
PCB thickness = 1.6 mm
Fig 9.
FR4 PCB, standard footprint SOT23 (TO-236AB)
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
8 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
13. Revision history
Table 10. Revision history Release date 20091214 Data sheet status Product data sheet Change notice Supersedes BAS101_BAS101S_1 Document ID BAS101_BAS101S_2 Modifications:
* *
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 "Pinning": updated Product data sheet -
BAS101_BAS101S_1
20060908
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
9 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
14. Legal information
14.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
14.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
14.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
14.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
15. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BAS101_BAS101S_2
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 -- 14 December 2009
10 of 11
NXP Semiconductors
BAS101; BAS101S
High-voltage switching diodes
16. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6 Packing information . . . . . . . . . . . . . . . . . . . . . 6 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 December 2009 Document identifier: BAS101_BAS101S_2

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